(3-5 semiconductor) A III-V semiconductor is a compound such as gallium and nitride (GaN) or gallium and arsenide (GaAs). Gallium has three (III) valence electrons, while nitride and arsenide have ...
Richard Hogg, chief technical officer of UK-based company III-V Epi, is advocating using GaAs epitaxial regrowth for many ...
Photonics comapny Ortel has transferred of wafer fabrication for its C-Band, high-power, continuous wave laser dodule ...
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Here's What to Expect From Broadcom's Next Earnings ReportWith a market cap of $947.5 billion, Broadcom Inc. (AVGO) is a global leader in designing, developing, and supplying ...
A group of scientists from the Tampere University in Finland has developed a III-V multi-junction solar cell which is claimed to have the potential for reaching a power conversion efficiency of ...
The cell, which looks externally like a device with a two-terminal architecture, was built with III-V semiconductor layers that were connected to the silicon sub-cell on the atomic level.
Ortel, a Photonics Foundries enterprise, today announced the successful transfer of wafer fabrication for its C-Band, ...
Week 5: Optical confinement factor. Refractive index in III-V materials. Wave guidance in lossy and gain medium. Threshold condition. Week 6: Semiconductor lasers. Materials for semiconductor lasers.
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