Here, by first-principles calculations based on density functional theory, we show that the Fermi-level pinning (FLP) factor of a metal–2D multilayered semiconductor junction (MmSJ) has a sensitive dependence on the layer-number of the MmSJ for few-layer 2D semiconductors, in a proposed extension of FLP theory.

2023年11月30日 · Multilayer InSe with a thickness above∼20 nm, is a direct semiconductor with a peak absorption wavelength approaching λ=1000 nm, which is a promising candidate for solar-energy conversion and 2D optoelectronics devices.

2024年12月4日 · It is shown on examples of multilayer nanowires with radial p – n junctions that cylindrical symmetry of such the structures results in peculiar effects of non-reciprocity when changing sequence order of the layers relatively nanowire center. This manifests itself as well in functional properties of devices based on such the structures.

Converting a layer of an N-type semiconductor into P type with acceptors would also create a PN junction. A PN junction has rectifying current–voltage (I–V or IV) characteristics as shown in Fig. 4–2. As a device, it is called a rectifier or a diode.

2023年4月30日 · Herein, we employ a series of 2D metals XY 2 (X = Nb, Se; Y = S, Se) as electrodes to construct metal–semiconductor junction (MSJ) with 2D ferroelectric In 2 Se 3. Although various Schottky barriers still exist at the interface for MSJs of single-layer In 2 Se 3 and 2D metals, with the increase of the number of In 2 Se 3 layers to bilayer (BL ...

2022年8月22日 · Nature Communications - Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate ...

2022年4月28日 · Herein, we review the recent key breakthroughs in the design, synthesis, electronic structure and property modulation of lateral semiconductor multijunctions and focus on their application-specific devices.

2022年9月8日 · Here, we report on a multi-layer junction that combines single layer graphene and vdW semiconductors (p -GaSe and n -In 2 Se 3) with strong optical absorption in the UV range. The junctions...

2016年5月2日 · A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as …

2020年5月30日 · Here, we report the observation of edge superconductivity in multilayer WTe 2 Josephson junctions. By varying the thickness of WTe 2 in SQI experiments, we have observed the Fraunhofer and the mixture of Fraunhofer and SQUID pattern in thick and thin WTe 2, respectively, which indicates the edge superconductivity in thin WTe 2.