2021年12月15日 · Here, we report an approach to experimentally demonstrate the origin of ferroelectric resistance switching using planar van der Waals ferroelectric α-In 2 Se 3 memristors. Through rational...

2024年12月20日 · A synaptic memristor using 2D ferroelectric junctions is a promising candidate for future neuromorphic computing with ultra-low power consumption, parallel computing, and adaptive scalable computing technologies.

2023年1月13日 · Ferroelectric tunnel junctions (FTJs) have great potential for application in high-density non-volatile memories. Recently, α -In 2 Se 3 was found to exhibit robust in-plane and out-of-plane...

2023年10月1日 · Based on first-principles calculations, we designed a two-dimensional ferroelectric semiconductor junction with SnSe as the channel and graphene as the electrodes. The in-plane ferroelectricity of SnSe makes the electronic structure of the SnSe-graphene interface direction dependent, and the corresponding device exhibits an asymmetric output ...

2025年1月15日 · Here, we introduce the newly discovered ferroelectric metal WTe 2 as the electrode to construct WTe 2 /α-In 2 Se 3 /Au ferroelectric semiconductor junctions. The interplay between the ferroelectricity in the van der Waals electrode and tunnel junction leads to the emergence of novel device characteristics, including concomitant multiresistance ...

In this work, we demonstrate a novel two-terminal memristor with metal-ferroelectric semiconductor-metal (M-FS-M) planar or crossbar structures for synaptic devices, which we coined as FSJ. Using FSJ as a synaptic device has two important advantages over the conventional FTJ or filament-based RRAM.

Ferroelectric tunnel junctions (FTJs) have great potential for application in high-density non-volatile memories. Recently, α-In2Se3 was found to exhibit robust in-plane and out-of-plane...

2023年11月15日 · Herein, the intercoupled 2D ferroelectricity of 𝛼-In 2 Se 3 is utilized to introduce micron-scale, non-volatile electrostatic doping in ambipolar WSe 2, enabling reconfigurable p–n junction. The actuation mechanism is based on the strong polarization field along the edge topology of In 2 Se 3.

A synaptic memristor using 2D ferroelectric junctions is a promising candidate for future neuromorphic computing with ultra-low power consumption, parallel computing, and adaptive scalable computing technologies. However, its utilization is restricted due to the limited operational voltage memory wi …

Abstract: Ferroelectric tunnel junctions (FTJs), composed of two metallic or semiconductor leads separated by a thin ferroelectric tunnel barrier, demonstrate significant potential for nonvolatile memory devices. With the development of device miniaturization, 2-D FTJs have attracted increasing attention due to the unique characteristics of ...